Modulated contrast and associated diffracted intensity of GaPySb1-y layers grown using organometallic vapor phase epitaxy

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering
Creator Stringfellow, Gerald B.
Other Author Seong, Tae-Yeon; Booker, G. R.; Norman, A. G.; Glas, F.
Title Modulated contrast and associated diffracted intensity of GaPySb1-y layers grown using organometallic vapor phase epitaxy
Date 2008
Description We have investigated the modulated structures and its associated diffracted diff_x000B_use intensity, of organometallic vapor phase epitaxially grown GaPSb (001) layers by using transmission electron microscopy (TEM) and transmission electron diff_x000B_raction (TED). The TEM results reveal the co-existence of a _x000C_fine-scale modulated contrast and a _x000C_fine-scale speckled contrast. In addition, a _x000C_fine needle-like contrast is observed. The [001] TED results show lines of [110]-oriented diff_x000B_use intensity diffuse streaks passing through the fundamental reflections, satellite spots at 1/4g[220] positions, and a [010]-oriented diff_x000B_use intensity with spacing of 1/6g[040]. Simulations using the Valence Force Field model were performed to understand the origin of the di_x000B_ffracted features. The observed distributions of di_x000B_ffuse intensity are shown to be partially consistent with random disorder. Furthermore, the [110]-oriented diff_x000B_use lines are attributed to a static displacement of the sites of the mixed sublattices.
Type Text
Publisher Korean Physical Society
Volume 52
Issue 2
First Page 471
Last Page 475
Subject Organometallic vapor phase epitaxy; GaPySb1-y layers; Modulated contrast; Diffracted intensity
Subject LCSH Epitaxy; Metal organic chemical vapor deposition
Language eng
Bibliographic Citation Seong, T.-Y., Booker, G. R., Norman, A. G., Glas, F., & Stringfellow, G. B. (2008). Modulated contrast and associated diffracted intensity of GaPySb1-y layers grown using organometallic vapor phase epitaxy. Journal of the Korean Physical Society, 52(2), 471-5.
Rights Management (c)Korean Physical Society
Format Medium application/pdf
Format Extent 375,077 bytes
Identifier ir-main,7751
ARK ark:/87278/s60k2t3d
Setname ir_uspace
ID 706366
Reference URL https://collections.lib.utah.edu/ark:/87278/s60k2t3d