Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, Li; Lu, Guang-Hong; Gong, X. G.
Title Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands
Date 2006-01
Description Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 102-103 times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 96
Issue 1
DOI 10.1103/PhysRevLett.96.016103
citatation_issn 0031-9007
Subject Surface mobility; SiGe film; Strained thin films; Surface diffusion barriers
Subject LCSH Surface chemistry
Language eng
Bibliographic Citation Huang, L., Liu, F., Lu, G.-H., & Gong, X. G. (2006). Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands. Physical Review Letters, 96(1), 016103.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.96.016103
Format Medium application/pdf
Format Extent 579,445 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6nz8rsh