| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Materials Science & Engineering |
| Creator |
Liu, Feng |
| Other Author |
Yang, Bin; Lagally, Max G. |
| Title |
Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy |
| Date |
2004-01 |
| Description |
From observations of self-assembly of Ge quantum dots directed by substrate morphology, we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated surface chemical potential. Using quite simple lithography, we demonstrate directed quantum dot ordering. The strain part of the chemical potential is caused by the spatially nonuniform relaxation of the strained layer, which in our study is the Ge wetting layer, but, more generally, can be a deposited strained buffer layer. This model provides a consistent picture of prior literature. |
| Type |
Text |
| Publisher |
American Physical Society |
| Journal Title |
Physical Review Letters |
| Volume |
92 |
| Issue |
2 |
| DOI |
10.1103/PhysRevLett.92.025502 |
| citatation_issn |
0031-9007 |
| Subject |
Self-organization; Heteroepitaxy; Chemical potential control; Ge quantum dots |
| Subject LCSH |
Strain theory (Chemistry); Self-organizing systems; Quantum dots; Epitaxy |
| Language |
eng |
| Bibliographic Citation |
Yang, B., Liu, F., & Lagally, M. G. (2004). Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy. Physical Review Letters, 92(2), 025502. |
| Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.92.025502 |
| Format Medium |
application/pdf |
| Format Extent |
661,890 bytes |
| Identifier |
ir-main,12175 |
| ARK |
ark:/87278/s6pn9pv5 |
| Setname |
ir_uspace |
| ID |
703387 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6pn9pv5 |
