Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Chang, Hao; Wu, Jian; Gu, Bing-Lin; Duan, Wenhui
Title Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond
Date 2005-10
Description We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in β-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 95
Issue 19
DOI 10.1103/PhysRevLett.95.196803
citatation_issn 0031-9007
Subject Metallization; Hydrogen adsorption; SiC; n-type doping; Hydrogen bridge bond
Subject LCSH Metallizing
Language eng
Bibliographic Citation Chang, H., Wu, J., Gu, B.-L., Liu, F. & Duan, W. (2005). Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond. Physical Review Letters, 95(19), 196803.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.95.196803
Format Medium application/pdf
Format Extent 322,451 bytes
Identifier ir-main,12149
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6wh377x