Modification of Si(001) substrate bonding by adsorbed Ge or Si dimer islands

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Qin, X. R.; Swartzentruber, B. S.; Lagally, M. G.
Title Modification of Si(001) substrate bonding by adsorbed Ge or Si dimer islands
Date 1998-09
Description High-resolution scanning tunneling microscopy studies of the Si(100)-(2 X 1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 81
Issue 11
First Page 2288
Last Page 2291
DOI 10.1103/PhysRevLett.81.2288
citatation_issn 0031-9007
Subject Si(001); Adsorbed Ge; Adsorbed Si; Dimer islands; Substrate bonding; Distortion
Subject LCSH Surface chemistry
Language eng
Bibliographic Citation Qin, X. R., Liu, F., Swartzentruber, B. S., & Lagally, M. G. (1998). Modification of Si(001) substrate bonding by adsorbed Ge or Si dimer islands. Physical Review Letters, 81(11), 2288-91.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.81.2288
Format Medium application/pdf
Format Extent 233,381 bytes
Identifier ir-main,12209
ARK ark:/87278/s67m0s5n
Setname ir_uspace
ID 703959
Reference URL https://collections.lib.utah.edu/ark:/87278/s67m0s5n