Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, L.; Gong, X. G.
Title Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces
Date 2004-10
Description Strain dependence of adatom binding energies and diffusion barriers in homo- and heteroepitaxies of Si and Ge on s001d surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Sis001d and Ges001d surfaces than a Ge adatom, in accordance with decreasing bond strength from Si-Si to Si-Ge and to a Ge-Ge bond. The overall surface diffusion anisotropy of Si and Ge adatoms is found to be comparable on both Sis001d and Ges001d. The essentially linear dependence of binding energies and diffusion barriers on external strain is reproduced in all the cases, giving strong evidence for a priori quantitative prediction of the effect of external strain on adatom binding and surface diffusion.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 70
Issue 15
DOI 10.1103/PhysRevB.70.155320
citatation_issn 1098-0121
Subject Strain effect; Adatom binding; Adatom diffusion; Adatoms; Heteroepitaxies; Homoepitaxies; (001) surfaces; Si; Ge
Subject LCSH Strain theory (Chemistry); Epitaxy
Language eng
Bibliographic Citation Huang, L., Liu, F., & Gong, X. G. (2004). Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on (001) Surfaces. Physical Review B, 70(15), 155320.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.70.155320
Format Medium application/pdf
Format Extent 146,754 bytes
Identifier ir-main,12168
ARK ark:/87278/s6w09q88
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6w09q88