Surface stress-induced island shape transition in Si(001) homoepitaxy

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Zielasek, V.; Zhao, Yuegang; Maxson, J. B.; Lagally, M. G.
Title Surface stress-induced island shape transition in Si(001) homoepitaxy
Date 2001-11
Description A low-energy electron microscopy study of two-dimensional Si(001) island shapes near thermal equilibrium on 10315 mm2 large single-domain terraces reveals a continuous increase of island aspect ratio and a shape transition from elliptical to ‘‘American-football''-like with increasing island size. The size-dependent island shapes are driven by elastic relaxation caused by the intrinsic surface stress anisotropy present on Si(001). Analysis of the measured elliptical island shapes based on an elastic-model calculation allows a quantitative determination of step energies and of the surface stress anisotropy as a function of temperature.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 64
Issue 20
DOI 10.1103/PhysRevB.64.201320
citatation_issn 0163-1829
Subject Si(001); Homoepitaxy; Island shape transition; Single-domain terraces
Subject LCSH Strain theory (Chemistry); Surface chemistry; Epitaxy
Language eng
Bibliographic Citation Zielasek, V., Liu, F., Zhao, Y., Maxson, J. B., & Lagally, M. G. (2001). Surface stress-induced island shape transition in Si(001) homoepitaxy. Physical Review B, 64(20), 201320(R).
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.64.201320
Format Medium application/pdf
Format Extent 207,745 bytes
Identifier ir-main,12187
ARK ark:/87278/s6k652gv
Setname ir_uspace
ID 705057
Reference URL https://collections.lib.utah.edu/ark:/87278/s6k652gv