Metal-to-semiconductor transition in squashed armchair carbon nanotubes

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Lu, Jun-Qiang; Wu, Jian; Duan, Wenhui; Zhu, Bang-Fen; Gu, Bing-Lin
Title Metal-to-semiconductor transition in squashed armchair carbon nanotubes
Date 2003-04
Description We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and the Green's function method. We demonstrate a metal-to-semiconductor transition while squashing the nanotubes and a general mechanism for such a transition. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and bond formation between the flattened faces in the squashed nanotubes.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 90
Issue 15
DOI 10.1103/PhysRevLett.90.156601
citatation_issn 0031-9007
Subject Squashed armchair; Carbon nanotubes; Metal-to-semiconductor transition; Electronic transport; Tight-binding molecular dynamics; Squashed nanotubes
Subject LCSH Nanotubes; Green's functions
Language eng
Bibliographic Citation Lu, J.Q., Wu, J., Duan, W., Liu, F., Zhu, B.-F., & Gu, B.-L. (2003). Metal-to-semiconductor transition in squashed armchair carbon nanotubes. Physical Review Letters, 90(15), 156601.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.90.156601
Format Medium application/pdf
Format Extent 404,120 bytes
Identifier ir-main,12179
ARK ark:/87278/s6v12p87
Setname ir_uspace
ID 705171
Reference URL https://collections.lib.utah.edu/ark:/87278/s6v12p87