First-principles study of impurity segregation in edge dislocations in Si

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Kaplan, Theodore; Mostoller, Mark; Chisholm, M. F.; Milman, V.
Title First-principles study of impurity segregation in edge dislocations in Si
Date 2000-01
Description Using ab initio calculations, the segregation of As, Ga, and Ge atoms in the core regions of perfect edge dislocations in Si is examined. When all nearest neighbors of an impurity are Si atoms, As favors the core site at maximum compression and has a segregation energy of 0.25 eV/atom. Ga and Ge impurities favor sites under maximum tension and have segregation energies of 0.44 and 0.19 eV per atom, respectively. For As impurities, however, a pairing mechanism yields an even larger segregation energy of 0.64 eV/atom.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 61
Issue 3
First Page 1674
Last Page 1676
DOI 10.1103/PhysRevB.61.1674
citatation_issn 0163-1829
Subject First-principles; Impurity segregation; Edge dislocations
Subject LCSH Silicon -- Inclusions; Semiconductors -- Impurity distribution
Language eng
Bibliographic Citation Kaplan, T., Liu, F., Mostoller, M., Chisholm, M. F., & Milman, V. (2000). First-principles study of impurity segregation in edge dislocations in Si. Physical Review B, 61(3), 1674-6.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.61.1674
Format Medium application/pdf
Format Extent 53,091 bytes
Identifier ir-main,12196
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6j96qsv