Coulomb sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surfaces

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Han, Y.; Zhu, J. Y.; Li, Shao-Chun; Jia, Jin-Feng; Zhang, Yan-Feng; Xue, Qi-Kun
Title Coulomb sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surfaces
Date 2004-09
Description We propose the concept of a ‘‘Coulomb sink'' to elucidate the effect of Coulomb charging on coarsening of metal mesas grown on semiconductor surfaces.We show that a charged mesa, due to its reduced chemical potential, acts as a Coulomb sink and grows at the expense of neighboring neutral mesas. The theory explains qualitatively the most salient features of coarsening of charged Pb mesas on the Si(111) surface, as observed by a scanning tunneling microscope. It provides a potentially useful method for controlled fabrication of metal nanostructures.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 93
Issue 10
DOI 10.1103/PhysRevLett.93.106102
citatation_issn 0031-9007
Subject Coulomb sink; Coulomb effect; Metal nanoclusters; Semiconductor surface; Pb mesas
Subject LCSH Coarsening (Chemistry); Surface chemistry
Language eng
Bibliographic Citation Han, Y., Zhu, J. Y., Liu, F., Li, S. C., Jia, J. F., Zhang, Y. F., & Xue, Q. K. (2004). Coulomb sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surface. Physical Review Letters, 93(10), 106102.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.93.106102
Format Medium application/pdf
Format Extent 603,282 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6ft94g5