Carrier concentration dependencies of magnetization & transport in Ga1-xMnxAs1-yTey
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.
Thin films; Metal-insulator transitions; Semiconductors -- Optical properties; Semiconductors -- Magnetic properties; Semiconductor doping; Holes (Electron deficiencies); Ion implantation
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27; 26-30 July 2004; Flagstaff, Arizona (USA)
Scarpulla, M. A., Yu, K. M., Walukiewicz W., & Dubon, O. D. (2005). Carrier concentration dependencies of magnetization & transport in Ga1-xMnxAs1-yTey. AIP Conference Proceedings, 772, 1367-8.
(c)American Institute of Physics. The following article appeared in Scarpulla, M., Yu, K. M., Walukiewicz W., & Dubon, O. D., AIP Conference Proceedings, 772, 2005 and may be found at http://dx.doi.org/10.1063/1.1994621