| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering |
| Creator |
Stringfellow, Gerald B.; Zhu, Jing Yi; Liu, Feng |
| Title |
Dual-surfactant effect to enhance p-type doping in III-V semiconductor thin films |
| Date |
2008-11 |
| Description |
Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower significantly the doping energy of Zn in GaP, while neither Sb nor H can function alone as an effective surfactant. Our finding suggests a general strategy for enhancing p-type doping of III-V semiconductors by using a metallic-element with H as dual surfactantsb |
| Type |
Text |
| Publisher |
American Physical Society |
| Journal Title |
Physical Review Letters |
| Volume |
101 |
| Issue |
19 |
| DOI |
10.1103/PhysRevLett.101.196103 |
| citatation_issn |
0031-9007 |
| Subject |
Surfactants; p-type doping |
| Subject LCSH |
Surface active agents; Doped semiconductors; Semiconductor doping; Thin films; Epitaxy |
| Language |
eng |
| Bibliographic Citation |
Zhu, J. Y., Liu, F., & Stringfellow, G. B. (2008). Dual-surfactant effect to enhance p-type doping in III-V semiconductor thin films. Physical Review Letters, 101(19), no.195103. |
| Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.101.196103 |
| Format Medium |
application/pdf |
| Format Extent |
412,979 bytes |
| Identifier |
ir-main,7747 |
| ARK |
ark:/87278/s6dv23d7 |
| Setname |
ir_uspace |
| ID |
705940 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6dv23d7 |
