| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Materials Science & Engineering |
| Creator |
Liu, Feng |
| Other Author |
Mostoller, Mark; Milman, V.; Chisholm, M. F.; Kaplan, Theodore |
| Title |
Electronic and elastic properties of edge dislocations in Si |
| Date |
1995-06 |
| Description |
Ab initio, tight-binding, and classical calculations have been done for (a/2)( 110) edge dislocation dipoles in Si at separations of 7.5-22.9 A in unit cells comprising 32-288 atoms. These calculations show states associated with the cores relatively deep in the band gap (~ 0.2 eV) despite the absence of dangling bonds. The shifts in the electronic states depend significantly on separation d and are correlated with a concentration of strain in the cores as the dislocations become more isolated. The strain energies exhibit a logarithmic dependence on d consistent with linear elasticity for all system sizes. |
| Type |
Text |
| Publisher |
American Physical Society |
| Journal Title |
Physical Review B |
| Volume |
51 |
| Issue |
23 |
| First Page |
17192 |
| Last Page |
17195 |
| DOI |
10.1103/PhysRevB.51.17192 |
| citatation_issn |
0163-1829 |
| Subject |
Edge dislocations |
| Subject LCSH |
Semiconductors -- Defects; Silicon |
| Language |
eng |
| Bibliographic Citation |
Liu, F., Mostoller, M., Milman, V., Chisholm, M. F., & Kaplan,T. (1995). Electronic and elastic properties of edge dislocations in Si. Physical Review B, 51(23), 17192-5. |
| Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.51.17192 |
| Format Medium |
application/pdf |
| Format Extent |
344,919 bytes |
| Identifier |
ir-main,12220 |
| ARK |
ark:/87278/s63b6hnw |
| Setname |
ir_uspace |
| ID |
706373 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s63b6hnw |
