Pattern formation on silicon-on-insulator

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Flack, Frank S.; Yang, Bin; Huang, Minghuang; Marcus, Matt; Simmons, Jason; Castellini, Olivia M.; Eriksson, Mark A.; Lagally, Max G.
Title Pattern formation on silicon-on-insulator
Date 2005
Description The strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on bulk Si (extendable to other QD systems) based on local chemical potential and curvature of the surface. Silicon-on-insulator (SOI) produces unique new phenomena. The essential thermodynamic instability of the very thin crystalline layer (called the template layer) resting on an oxide can cause this layer, under appropriate conditions, to dewet, agglomerate, and self-organize into an array of Si nanocrystals. Using low-energy electron microscopy (LEEM), we observe this process and, with the help of first-principles total-energy calculations, we provide a quantitative understanding of this pattern formation. The Si nanocrystal pattern formation can be controlled by lithographic patterning of the SOI prior to the dewetting process. The resulting patterns of electrically isolated Si nanocrystals can in turn be used as a template for growth of nanostructures, such as carbon nanotubes (CNTs). Finally we show that this growth may be controlled by the flow dynamics of the feed gas across the substrate.
Type Text
Publisher Materials Research Society
Volume 849
Subject Pattern formation; Silicon-on-insulator; Strain driven; Faceted Ge nanocrystals; Si(001); Directed assembly
Subject LCSH Self-assembly (Chemistry); Strain theory (Chemistry); Epitaxy; Quantum dots
Language eng
Bibliographic Citation Flack, F. S., Yang, B., Huang, M., Marcus, M., Simmons, J., Castellini, O. M., Eriksson, M. A., Liu, F., & Lagally, M. G. (2005). Pattern formation on silicon-on-insulator. MRS Symposium Proceedings, 849, KK1.3.1/JJ1.3.1/U1.3.1.-9.
Rights Management (c) Materials Research Society http://www.mrs.org/
Format Medium application/pdf
Format Extent 782,526 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6rf6ck8