Nanostressors and the nanomechanical response of a thin silicon film on an insulator

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Huang, Minghuang; Rugheimer, P. P.; Savage, D. E.; Lagally, M. G.
Title Nanostressors and the nanomechanical response of a thin silicon film on an insulator
Date 2002-09
Description Pseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of the Si template and to show that its magnitude approaches the maximum value for a freestanding membrane. The requisite greatly enhanced viscous flow of SiO2 underneath the Si layer is consistent with the dependence of the viscosity of SiO2 on shear stress.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 89
Issue 13
DOI 10.1103/PhysRevLett.89.136101
citatation_issn 0031-9007
Subject Nanostressors; Nanomechanical response; Thin silicon film
Subject LCSH Nanoelectromechanical systems; Thin films
Language eng
Bibliographic Citation Liu, F., Huang, M., Rugheimer, P., Savage, D. E., & Lagally, M. G. (2002). Nanostressors and the nanomechanical response of a thin silicon film on an insulator. Physical Review Letters, 89(13), 136101.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.89.136101
Format Medium application/pdf
Format Extent 255,533 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6w38dw8