Interplay of stress, structure, and stoichiometry in Ge-covered Si(001)

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Lagally, M. G.
Title Interplay of stress, structure, and stoichiometry in Ge-covered Si(001)
Date 1996-04
Description By calculating the evolution of surface energies and surface stress tensors of Ge-covered Si(001) with increasing Ge coverage, we derive the most probable Ge stoichiometry in the subsurface regions beyond 1 monolayer coverage. We compare the calculated surface reconstruction and surface stress at the thermodynamic and kinetic limits to experiment to provide a quantitative understanding of the recently observed Ge-induced reversal of surface stress anisotropy.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 76
Issue 17
First Page 3156
Last Page 3159
DOI 10.1103/PhysRevLett.76.3156
citatation_issn 0031-9007
Subject Ge-covered; Si(001); Stress; Structure; Surface stress tensors
Subject LCSH Stoichiometry; Surface energy; Surface chemistry; Anisotropy
Language eng
Bibliographic Citation Liu, F., & Lagally, M. G. (1997). Interplay of stress, structure, and stoichiometry in Ge-covered Si(001). Physical Review Letters, 76(17), 3156-9.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.76.3156
Format Medium application/pdf
Format Extent 86,405 bytes
Identifier ir-main,12216
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6zs3dm9