Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
citation_date
2006-08
Description
We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a “holographic metal” at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.
Type
text;
citation_publisher
American Physical Society
citation_journal_title
Physical Review B
citation_volume
74
citation_issue
8
citation_doi
10.1103/PhysRevB.74.085308
citatation_issn
1098-0121
citation_keywords
Topological insulator; Holographic metal; Edge states
Subject (LCSH)
Quantum Hall effect; Paramagnetism; Semiconductors; Condensed matter
citation_language
eng;
Bibliographic Citation
Qi, X.-L., Wu, Y.-S., & Zhang, S.-C. (2006). Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors. Physical Review B - Condensed Matter and Materials Physics, 74(8), no.085308.
