Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering
Creator Stringfellow, Gerald B.
Other Author Niu, X. B.; Liu, Feng
Title Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode
Date 2011
Description Equilibrium composition profiles (CPs) of epitaxial alloy quantum dots (QDs) are well established theoretically. However nonequilibrium CPs may occur experimentally. Using an atomistic-strain-model Monte Carlo simulation method, we demonstrate a striking correlation between the nonequilibrium CPs of QDs and the kinetic growth mode: the layer-by-layer growth (LG) and faceted growth (FG) form a coreshell structure having the triangle core of the unstrained and V-shaped core of the strained component, respectively, and both are distinctly different from the equilibrium CP. Comparing simulations with experiments, we infer that the InGaAs dots on GaAs grow by FG, while GeSi dots on Si grow first by LG followed by FG. Our findings suggest a possible method for controlling the CPs of QDs by selecting the growth mode.
Type Text
Publisher American Institute of Physics (AIP)
Volume 107
Issue 7
First Page 76101
Last Page 76101
DOI 10.1103/PhysRevLett.107.076101
Language eng
Bibliographic Citation Niu, X. B., Stringfellow, G. B., & Liu, F. (2011). Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode. Physical Review Letters, 107(7), 076101-1-076101-4.
Rights Management ©American Institute of Physics. The following article appeared in Niu, X. B., Stringfellow, G. B., & Liu, F., Physical Review Letters, 107(7), 2011. and may be found at http://dx.doi.org/10.1103/PhysRevLett.107.076101.
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6rb7p6d