Towards quantitative understanding of formation and stability of Ge hut islands on Si(001)

Update Item Information
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Lu, Guang-Hong
Title Towards quantitative understanding of formation and stability of Ge hut islands on Si(001)
Date 2005-05
Description We analyze Ge hut island formation on Si(001), using first-principles calculations of energies, stresses, and their strain dependence of Ge/Si(105) and Ge/Si(001) surfaces combined with continuum modeling. We give a quantitative assessment on strain stabilization of Ge(105) facets, estimate the critical size for hut nucleation or formation, and evaluate the magnitude of surface stress discontinuity at the island's edge and its effect on island stability.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 94
Issue 17
DOI 10.1103/PhysRevLett.94.176103
citatation_issn 0031-9007
Subject Ge hut islands; Si(001); First-principles calculations; Heteroepitaxial growth
Subject LCSH Strain theory (Chemistry); Epitaxy
Language eng
Bibliographic Citation Lu, G. H., & Liu, F. (2005). Towards quantitative understanding of formation and stability of Ge hut islands on Si(001). Physical Review Letters, 94(17), 176103.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.94.176103
Format Medium application/pdf
Format Extent 151,182 bytes
Identifier ir-main,12162
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6z616r0