Thermal roughening of a thin film: a new type of roughening transition

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Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Maxson, J. B.; Savage, D. E.; Tromp, R. M.; Reuter, M. C.; Lagally, M. G.
Title Thermal roughening of a thin film: a new type of roughening transition
Date 2000-09
Description The equilibrium thermal roughening of thin Ge layers (one and two monolayers) deposited on Si(001) has been investigated with low-energy electron microscopy. A Ge-coverage-dependent roughening is observed. For two monolayers, the temperature at which imaging contrast is lost due to surface roughness is 900 ± 25 ◦C, between the roughening temperatures of Ge(001) and Si(001). Lower Ge coverages move this temperature closer to that of Si(001). The roughening is confined to the Ge overlayers. It is believed that this phenomenon represents a new type of surface roughening transition that should be generally applicable for heteroepitaxial films.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 85
Issue 10
First Page 2152
Last Page 2155
DOI 10.1103/PhysRevLett.85.2152
citatation_issn 0031-9007
Subject Thermal roughening; Roughening transition; Heteroepitaxial growth
Subject LCSH Thin films -- Thermal properties; Surface roughness; Epitaxy
Language eng
Bibliographic Citation Maxson, J. B., Savage, D. E., Tromp, R. M., Reuter, M. C., Liu, F., & Lagally, M. G. (2000). Thermal roughening of a thin film: a new type of roughening transition. Physical Review Letters, 85(10), 2152-5.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.85.2152
Format Medium application/pdf
Format Extent 226,079 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6qj81zj