Phase separation in strained epitaxial InGaN islands

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Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering
Creator Stringfellow, Gerald B.
Other Author Niu, Xiaobin; Liu, Feng
Title Phase separation in strained epitaxial InGaN islands
Date 2011
Description Phase separation (PS) produces InN composition gradients in InGaN islands, which may be important for light emitting diodes, solar cells, and lasers. Thus, the control of PS is critical, and the kinetic growth process, which is suggested to be important for controlling PS in Stranski-Krastanov islands, becomes a key factor in producing materials for optoelectronic devices. We present atomistic-strain-model Monte Carlo simulations for PS in strained epitaxial InGaN islands. Our simulations illustrate how the PS in InGaN islands depends on the kinetic growth mode and subsurface diffusion, and thus suggest ideas for controlling the microstructure of alloy islands formed during epitaxial growth.
Type Text
Publisher American Institute of Physics (AIP)
Volume 99
Issue 21
First Page 213102
Last Page 213101
DOI 10.1063/1.3662927
Language eng
Bibliographic Citation Niu, X., Stringfellow, G. B., & Liu, F. (2011). Phase separation in strained epitaxial InGaN islands. Applied Physics Letters, 99(21), 213102-1-213102-3.
Rights Management ©American Institute of Physics. The following article appeared in Niu, X., Stringfellow, G. B., & Liu, F., Applied Physics Letters, 99(21), 2011. and may be found at http://dx.doi.org/10.1063/1.3662927.
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Identifier ir-main,17083
ARK ark:/87278/s6n5953z
Setname ir_uspace
ID 707543
Reference URL https://collections.lib.utah.edu/ark:/87278/s6n5953z