Strain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strain

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Publication Type pre-print
School or College College of Engineering
Department Materials Science & Engineering
Creator Liu, Feng
Other Author Zhou, Miao; Liu, Zheng; Wang, Zhengfei; Bai, Zhaoqiang; Feng, Yuanping; Lagally, Max G.
Title Strain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strain
Date 2013-01-01
Description By combining density functional theory, nonequilibrium Green's function formulism and effective- Hamiltonian approaches, we demonstrate strain-engineered surface transport in Si(001), with the complete isolation of the Si surface states from the bulk bands. Our results show that sufficient tensile strain can effectively remove the overlap between the surface valence state and the bulk valence band, because of the drastically different deformation potentials. Isolation of the surface valence state is possible with a tensile strain of 1:5%, a value that is accessible experimentally. Quantum transport simulations of a chemical sensing device based on strained Si(001) surface confirm the dominating surface conductance, giving rise to an enhanced molecular sensitivity. Our results show promise for using strain engineering to further our ability to manipulate surface states for quantum information processing and surface state-based devices.
Type Text
Publisher American Physical Society
Volume 111
Issue 24
First Page 246801-1
Last Page 246801-5
Language eng
Bibliographic Citation Zhou, M., Liu, Z., Wang, Z., Bai, Z., Feng, Y., Lagally, M. G., & Liu, F. (2013). Strain-engineered surface transport in Si(001): Complete isolation of the surface state via tensile strain. Physical Review Letters, 111(24), 246801-1-246801-5.
Rights Management (c) American Physical Society http://dx.doi.org/DOI: 10.1103/PhysRevLett.111.246801
Format Medium application/pdf
Format Extent 764,739 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6ck1pf8